Drift-diffusion models for the simulation of a graphene field effect transistor

DOI10.1186/s13362-022-00120-3zbMath1485.82007OpenAlexW4207071480MaRDI QIDQ2138196

Vittorio Romano, Giovanni Nastasi

Publication date: 11 May 2022

Published in: Journal of Mathematics in Industry (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1186/s13362-022-00120-3

zbMATH Keywords

drift-diffusion modelgraphenegraphene FET

Mathematics Subject Classification ID

Interface problems; diffusion-limited aggregation in time-dependent statistical mechanics (82C24)

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Uses Software

• GFET

Cites Work

• Unnamed Item
• Derivation of isothermal quantum fluid equations with Fermi-Dirac and Bose-Einstein statistics
• Cross validation of discontinuous Galerkin method and Monte Carlo simulations of charge transport in graphene on substrate
• A full coupled drift-diffusion-Poisson simulation of a GFET
• Improved mobility models for charge transport in graphene
• Quantum corrected hydrodynamic models for charge transport in graphene
• A hydrodynamic model for silicon semiconductors including crystal heating
• Simulation of Bipolar Charge Transport in Graphene by Using a Discontinuous Galerkin Method
• Charge Transport in Graphene including Thermal Effects

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