Charge-particles transport in semiconductors characterized by a generalized Langevin equation with a fractional noise

DOI10.1016/j.physa.2019.122339OpenAlexW2966913466WikidataQ127389995 ScholiaQ127389995MaRDI QIDQ2164074

Guitian He, Yan Tian, Mao-Kang Luo

Publication date: 12 August 2022

Published in: Physica A (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1016/j.physa.2019.122339

zbMATH Keywords

semiconductorfractional Gaussian noiseHall effectgeneralized Langevin equation

Mathematics Subject Classification ID

Statistical mechanics, structure of matter (82-XX)

Related Items (3)

Electronic plasma Brownian motion with radiation reaction force ⋮ Three transport models for charged particles in three-dimensional semiconductors driven by a fractional noise ⋮ Non-Markovian thermal-bath-induced Brownian motion in velocity space in the presence of a magnetic field at arbitrary direction

Cites Work

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• Fractional calculus for scientists and engineers.
• Charged Brownian particles: Kramers and Smoluchowski equations and the hydrothermodynamical picture
• Non-Markovian Brownian motion in a magnetic field and time-dependent force fields
• Hot Brownian carriers in the Langevin picture: application to a simple model for the gunn effect in gaas
• Aging properties of an anomalously diffusing particle
• Estimation of frequency noise in semiconductor lasers due to mechanical thermal noise
• External noise effects in doped semiconductors operating under sub-THz signals
• The restaurant at the end of the random walk: recent developments in the description of anomalous transport by fractional dynamics
• On the Langevin approach to particle transport
• Transport, Collective Motion, and Brownian Motion

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