Two-grid method for semiconductor device problem by mixed finite element method and characteristics finite element method
DOI10.3934/era.2020095zbMath1456.65119OpenAlexW3084628579MaRDI QIDQ2220728
Yanping Chen, Ying Liu, Yang Wang, Yunqing Huang
Publication date: 25 January 2021
Published in: Electronic Research Archive (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.3934/era.2020095
mixed finite element methodtwo-grid methodsemiconductor devicecharacteristics finite element method\(L^q\) error estimates
Numerical computation of solutions to systems of equations (65H10) Stability and convergence of numerical methods for initial value and initial-boundary value problems involving PDEs (65M12) Statistical mechanics of semiconductors (82D37) Finite element, Rayleigh-Ritz and Galerkin methods for initial value and initial-boundary value problems involving PDEs (65M60) Multigrid methods; domain decomposition for initial value and initial-boundary value problems involving PDEs (65M55) Electro- and magnetostatics (78A30) Initial-boundary value problems for PDEs of mixed type (35M13) PDEs in connection with semiconductor devices (35Q81)
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