An in-depth study on WENO-based techniques to improve parameter extraction procedures in MOSFET transistors

DOI10.1016/j.matcom.2014.11.018OpenAlexW2056418812MaRDI QIDQ2228702

Yanyan Li

Publication date: 19 February 2021

Published in: Mathematics and Computers in Simulation (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1016/j.matcom.2014.11.018

zbMATH Keywords

MOSFETsDIBL effectsthreshold voltage extractionWENO procedure

Mathematics Subject Classification ID

Biology and other natural sciences (92-XX) Optics, electromagnetic theory (78-XX)

Related Items (6)

High order WENO and DG methods for time-dependent convection-dominated PDEs: A brief survey of several recent developments ⋮ A spline quasi-interpolation based method to obtain the reset voltage in resistive RAMs in the charge-flux domain ⋮ Polynomial pattern finding in scattered data ⋮ Stochastic modeling of random access memories reset transitions ⋮ Estimation of the reset voltage in resistive RAMs using the charge-flux domain and a numerical method based on quasi-interpolation and discrete orthogonal polynomials ⋮ An efficient smoothness indicator mapped WENO scheme for hyperbolic conservation laws

Cites Work

• Point-value WENO multiresolution applications to stable image compression
• Weighted essentially non-oscillatory schemes
• Weighted ENO interpolation and applications.
• Efficient implementation of weighted ENO schemes
• A comprehensive characterization of the threshold voltage extraction in MOSFETs transistors based on smoothing splines

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