Modeling and simulation of the lateral photovoltage scanning method

DOI10.1016/j.camwa.2021.10.017OpenAlexW3108330614MaRDI QIDQ2239117

Patricio Farrell, Nella Rotundo, Stefan Kayser

Publication date: 2 November 2021

Published in: Computers \& Mathematics with Applications (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1016/j.camwa.2021.10.017

zbMATH Keywords

finite volume methoddrift-diffusion modelcrystal growthcharge transportsemiconductor simulationlateral photovoltage scanning method (LPS)

Mathematics Subject Classification ID

PDEs in connection with optics and electromagnetic theory (35Q60) Error bounds for boundary value problems involving PDEs (65N15) Inverse problems for PDEs (35R30) Stability and convergence of numerical methods for boundary value problems involving PDEs (65N12) Statistical mechanics of semiconductors (82D37)

Uses Software

• ddfermi

Cites Work

• Unnamed Item
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• An existence result for elliptic partial differential-algebraic equations arising in semiconductor modeling
• Computational and analytical comparison of flux discretizations for the semiconductor device equations beyond Boltzmann statistics
• Identification of doping profiles in semiconductor devices
• Existence of Bounded Discrete Steady-State Solutions of the Van Roosbroeck System on Boundary Conforming Delaunay Grids
• On inverse doping profile problems for the stationary voltage–current map
• Parabolic Differential-Algebraic Models in Electrical Network Design

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