Upwind finite volume element methods for one-dimensional semiconductor device

DOI10.1007/S11424-011-9021-4zbMath1271.65125OpenAlexW2057786269MaRDI QIDQ2392657

Chuanjun Chen, Daigang Lu, Wei Liu

Publication date: 2 August 2013

Published in: Journal of Systems Science and Complexity (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1007/s11424-011-9021-4

zbMATH Keywords

convergencenumerical experimentsdiffusion equationerror estimateupwind schemefinite volume element methodsemiconductor device

Mathematics Subject Classification ID

Initial-boundary value problems for second-order parabolic equations (35K20) Stability and convergence of numerical methods for initial value and initial-boundary value problems involving PDEs (65M12) Statistical mechanics of semiconductors (82D37) Finite element, Rayleigh-Ritz and Galerkin methods for initial value and initial-boundary value problems involving PDEs (65M60) Error bounds for initial value and initial-boundary value problems involving PDEs (65M15) Finite volume methods for initial value and initial-boundary value problems involving PDEs (65M08) PDEs in connection with statistical mechanics (35Q82)

Related Items (1)

Efficient algorithm based on two-grid method for semiconductor device problem

Cites Work

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• On the finite volume element method
• Finite volume element approximations of nonlocal in time one-dimensional flows in porous media
• Finite Element Solution of the Fundamental Equations of Semiconductor Devices. I
• Finite Difference Scheme for Parabolic Problems on Composite Grids with Refinement in Time and Space
• On the Accuracy of the Finite Volume Element Method Based on Piecewise Linear Polynomials
• Error Estimates for a Finite Volume Element Method for Elliptic PDEs in Nonconvex Polygonal Domains
• Finite Volume Methods for Convection-Diffusion Problems

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