Multigroup equations to the hot-electron hot-phonon system in III--V compound semiconductors

DOI10.1016/j.cma.2004.07.027zbMath1136.82364OpenAlexW2035466189MaRDI QIDQ2488973

M. Galler, Ferdinand Schürrer

Publication date: 16 May 2006

Published in: Computer Methods in Applied Mechanics and Engineering (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1016/j.cma.2004.07.027

zbMATH Keywords

Boltzmann transport equationsMultigroup approachPolar semiconductorRees effect

Mathematics Subject Classification ID

Statistical mechanics of semiconductors (82D37) Kinetic theory of gases in time-dependent statistical mechanics (82C40)

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Uses Software

• WENO

Cites Work

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• Deterministic particle simulations of the Boltzmann transport equation of semiconductors
• Upwind finite difference solution of Boltzmann equation applied to electron transport in semiconductor devices
• A WENO-solver for the transients of Boltzmann-Poisson system for semiconductor devices: Performance and comparisons with Monte Carlo methods.
• A multicell matrix solution to the Boltzmann equation applied to the anisotropic electron transport in silicon
• A deterministic solution method for the coupled system of transport equations for the electrons and phonons in polar semiconductors
• Space-Time Discretization of Series Expansion Methods for the Boltzmann Transport Equation
• Moment Methods for the Semiconductor Boltzmann Equation on Bounded Position Domains
• A Semicontinuous Formulation of the Bloch--Boltzmann--Peierls Equations
• A finite difference scheme solving the Boltzmann-Poisson system for semiconductor devices