Quasi-neutral limit of the drift-diffusion model for semiconductors with general sign-changing doping profile

DOI10.1007/s11425-008-0039-6zbMath1186.35016OpenAlexW2087877346MaRDI QIDQ2519323

Shu Wang, Ling Hsiao, Qiang Chang Ju

Publication date: 26 January 2009

Published in: Science in China. Series A (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1007/s11425-008-0039-6

zbMATH Keywords

quasi-neutral limitdrift-diffusion equationsmultiple scaling asymptotic expansions

Mathematics Subject Classification ID

Asymptotic behavior of solutions to PDEs (35B40) Reaction-diffusion equations (35K57) Asymptotic expansions of solutions to PDEs (35C20) Statistical mechanics of semiconductors (82D37) Ionized gas flow in electromagnetic fields; plasmic flow (76X05)

Related Items (2)

Mixed layer problem and quasineutral limit of the bipolar drift-diffusion model with different mobilities ⋮ QUASI-NEUTRAL LIMIT OF THE MULTIDIMENSIONAL DRIFT-DIFFUSION MODELS FOR SEMICONDUCTORS

Cites Work

• Unnamed Item
• On Maxwellian equilibria of insulated semiconductors
• Quasi-neutral limit of a nonlinear drift diffusion model for semiconductors
• The initial time layer problem and the quasineutral limit in the semiconductor drift-diffusion model
• QUASINEUTRAL LIMIT OF THE DRIFT-DIFFUSION MODEL FOR SEMICONDUCTORS WITH GENERAL INITIAL DATA
• A Singularly Perturbed Boundary Value Problem Modelling a Semiconductor Device
• Quasi-neutral Limit of the Drift Diffusion Models for Semiconductors: The Case of General Sign-Changing Doping Profile
• On singular limits of mean-field equations.

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