Finite difference fractional step methods for the transient behavior of a semiconductor device

DOI10.1016/S0252-9602(05)60006-9zbMath1118.65360OpenAlexW2783671928MaRDI QIDQ2569254

Yi-Rang Yuan

Publication date: 18 October 2005

Published in: Acta Mathematica Scientia. Series B. (English Edition) (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1016/s0252-9602(05)60006-9

zbMATH Keywords

characteristic finite difference\(l^2\) error estimate3-dimensional heat conductiongeneral region semiconductor deviceparallel fractional steps

Mathematics Subject Classification ID

Heat equation (35K05) Finite difference methods for initial value and initial-boundary value problems involving PDEs (65M06) Statistical mechanics of semiconductors (82D37) Error bounds for initial value and initial-boundary value problems involving PDEs (65M15)

Related Items (3)

A mixed-finite volume element coupled with the method of characteristic fractional step difference for simulating transient behavior of semiconductor device of heat conductor and its numerical analysis ⋮ Superconvergence analysis of finite element method for nonlinear semiconductor device problem ⋮ Finite volume element approximation and analysis for a kind of semiconductor device simulation

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