Numerical simulation of the distribution of charge carrier in nanosized semiconductor heterostructures with account for polarization effects

DOI10.1134/S0965542516010048zbMath1343.82054MaRDI QIDQ2629981

D. L. Reviznikov, K. K. Abgaryan

Publication date: 8 July 2016

Published in: Computational Mathematics and Mathematical Physics (Search for Journal in Brave)

zbMATH Keywords

Schrödinger equationPoisson equationnumerical simulationelectron densitysemiconductor heterostructuresmobility of charge carriers

Mathematics Subject Classification ID

Statistical mechanics of semiconductors (82D37) Finite difference methods for boundary value problems involving PDEs (65N06) Motion of charged particles (78A35) Numerical methods for eigenvalue problems for boundary value problems involving PDEs (65N25) Quantum waveguides, quantum wires (82D77) PDEs in connection with statistical mechanics (35Q82)

Related Items (1)

Stochastic simulation of electron transport in a strong electrical field in low-dimensional heterostructures

Cites Work

• Computational issues in the simulation of semiconductor quantum wires
• The Role of the Boundary Conditions on the Current Degradation in FD-SOI Devices
• Thermal Modeling of GaN HEMTs
• Computer simulation of stable structures in crystal substances

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