1/f noise under drift and thermal agitation in semiconductor materials

DOI10.1016/j.physa.2022.126917OpenAlexW4206099008MaRDI QIDQ2669405

Ferdinand Grüneis

Publication date: 9 March 2022

Published in: Physica A (Search for Journal in Brave)

Full work available at URL: https://arxiv.org/abs/2202.05390

zbMATH Keywords

statistical thermodynamics1/f noisegeneration-recombination noisenoise processes and phenomena in electronic transportfluorescence intermittencysingle quantum dots

Mathematics Subject Classification ID

Statistical mechanics, structure of matter (82-XX)

Cites Work

• An alternative form of Hooge's relation for 1/f noise in semiconductor materials
• The transition from generation-recombination noise in bulk semiconductors to discrete switching in small-area semiconductors
• Estimation of the lowest limit of \(1/f\) noise in semiconductor materials
• Intermittency in relation with 1/f noise and stochastic differential equations
• The Statistical Energy-Frequency Spectrum of Random Disturbances
• Mathematical Analysis of Random Noise
• Unnamed Item
• Unnamed Item
• Unnamed Item

This page was built for publication: 1/f noise under drift and thermal agitation in semiconductor materials