New developments in the numerical approximation of the drift-diffusion semiconductor device equation
From MaRDI portal
Publication:2704864
zbMATH Open1005.78513MaRDI QIDQ2704864
Publication date: 16 February 2003
Finite element, Rayleigh-Ritz and Galerkin methods for boundary value problems involving PDEs (65N30) Finite element, Galerkin and related methods applied to problems in optics and electromagnetic theory (78M10) Statistical mechanics of semiconductors (82D37) Boundary element methods for boundary value problems involving PDEs (65N38)
Related Items (2)
An HDG method for the time-dependent drift-diffusion model of semiconductor devices ⋮ New additive difference method for solving semiconductor problems
Recommendations
- Title not available (Why is that?) 👍 👎
- Title not available (Why is that?) 👍 👎
- Title not available (Why is that?) 👍 👎
- Numerical methods for a quantum drift-diffusion equation in semiconductor physics 👍 👎
- On the semiconductor drift diffusion equations 👍 👎
- New solutions for the quantum drift–diffusion model of semiconductors 👍 👎
- A Numerical Method for Kinetic Semiconductor Equations in the Drift-Diffusion Limit 👍 👎
- ASYMPTOTICAL AND NUMERICAL ANALYSIS OF DEGENERACY EFFECTS ON THE DRIFT-DIFFUSION EQUATIONS FOR SEMICONDUCTORS 👍 👎
- A Finite Element Approximation Theory for the Drift Diffusion Semiconductor Model 👍 👎
- Numerical Approximation of a Drift‐Diffusion Model for Semiconductors with Nonlinear Diffusion 👍 👎
This page was built for publication: New developments in the numerical approximation of the drift-diffusion semiconductor device equation
Report a bug (only for logged in users!)Click here to report a bug for this page (MaRDI item Q2704864)