Modelling DC characteristics of GaAs MESFETs in a wide range of temperatures

DOI<link itemprop=identifier href="https://doi.org/10.1002/1099-1204(200101/02)14:1<1::AID-JNM392>3.0.CO;2-2" /><1::AID-JNM392>3.0.CO;2-2 10.1002/1099-1204(200101/02)14:1<1::AID-JNM392>3.0.CO;2-2zbMath1090.82516OpenAlexW2064723464MaRDI QIDQ2708353

Anna Gina Perri, Agostino Giorgio

Publication date: 2001

Full work available at URL: https://doi.org/10.1002/1099-1204(200101/02)14:1<1::aid-jnm392>3.0.co;2-2

zbMATH Keywords

MESFETssemiconductor device modellingsemiconductor device measurementssemiconductor device thermal factors

Mathematics Subject Classification ID

Statistical mechanics of semiconductors (82D37)

Cites Work

• Singular distributed parameter systems

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