Non-parabolic band hydrodynamical model of silicon semiconductors and simulation of electron devices
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Publication:2726639
DOI10.1002/mma.220zbMath0981.35040OpenAlexW2051877451MaRDI QIDQ2726639
Publication date: 18 March 2002
Published in: Mathematical Methods in the Applied Sciences (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1002/mma.220
Hyperbolic conservation laws (35L65) Finite difference methods for initial value and initial-boundary value problems involving PDEs (65M06) Statistical mechanics of semiconductors (82D37) Motion of charged particles (78A35)
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Asymptotic stability of the stationary solution for a new mathematical model of charge transport in semiconductors ⋮ Study of the jump conditions for the 2D MEP hydrodynamical model of charge transport in semiconductors ⋮ Nonlinear asymptotic stability of the equilibrium state for the MEP model of charge transport in semiconductors ⋮ Optimal Control for Semiconductor Diode Design based on the MEP Energy-Transport Model ⋮ 2D numerical simulation of the MEP energy-transport model with a finite difference scheme ⋮ A non parabolic hydrodynamical subband model for semiconductors based on the maximum entropy principle ⋮ Semiconductor device design using the \textsc{BiMADS} algorithm ⋮ Strong discontinuities for the 2-D MEP hydrodynamical model of charge transport in semiconductors ⋮ Numerical simulation of a double-gate MOSFET with a subband model for semiconductors based on the maximum entropy principle ⋮ An improved 2D-3D model for charge transport based on the maximum entropy principle ⋮ Local-in-time well-posedness of a regularized mathematical model for silicon MESFET ⋮ Electron-phonon hydrodynamical model for semiconductors ⋮ Simulation of a double-gate MOSFET by a non-parabolic energy-transport subband model for semiconductors based on the maximum entropy principle ⋮ 2d numerical simulations of an electron-phonon hydrodynamical model based on the maximum entropy principle ⋮ Quantum corrections to the semiclassical hydrodynamical model of semiconductors based on the maximum entropy principle ⋮ A hydrodynamical model for holes in silicon semiconductors: the case of non-parabolic warped bands ⋮ Asymptotic stability of the equilibrium state for the hydrodynamical model of charge transport in semiconductors based on the maximum entropy principle ⋮ Exact invariant solutions for a class of energy-transport models of semiconductors in the two dimensional stationary case ⋮ Global existence for the system of the macroscopic balance equations of charge transport in semiconductors ⋮ Simulation of Gunn oscillations with a non‐parabolic hydrodynamical model based on the maximum entropy principle ⋮ Linear asymptotic stability of the equilibrium state for the 2-D MEP hydrodynamical model of charge transport in semiconductors ⋮ Maximum entropy moment system of the semiconductor Boltzmann equation using Kane's dispersion relation ⋮ Kinetic and Hydrodynamic Models for Multi-Band Quantum Transport in Crystals ⋮ 2D simulation of a silicon MESFET with a nonparabolic hydrodynamical model based on the maximum entropy principle ⋮ Hydrodynamic modeling of short-channel devices using an upwind flux vector splitting scheme.
Cites Work
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- Maximisation of the entropy in non-equilibrium
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- Extended Hydrodynamical Model of Carrier Transport in Semiconductors
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