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A model of GaAs growth in molecular-beam epitaxy - MaRDI portal

A model of GaAs growth in molecular-beam epitaxy

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Publication:2738363

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zbMATH Open0974.82517MaRDI QIDQ2738363

N. V. Peskov

Publication date: 13 December 2001

Published in: Matematicheskoe Modelirovanie (Search for Journal in Brave)

Full work available at URL: http://mathnet.ru/eng/mm/v2/i7/p116

Mathematics Subject Classification ID

Statistical mechanics of semiconductors (82D37)

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