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Comparative study of finite element formulations for the semiconductor drift-diffusion equations

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Publication:2755785
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DOI<link itemprop=identifier href="https://doi.org/10.1002/(SICI)1097-0207(19970930)40:18<3405::AID-NME219>3.0.CO;2-D" /><3405::AID-NME219>3.0.CO;2-D 10.1002/(SICI)1097-0207(19970930)40:18<3405::AID-NME219>3.0.CO;2-DzbMath1050.78510OpenAlexW1976020946MaRDI QIDQ2755785

Craig M. Johnson, J. T. Trattles

Publication date: 12 November 2001

Full work available at URL: https://doi.org/10.1002/(sici)1097-0207(19970930)40:18<3405::aid-nme219>3.0.co;2-d



Mathematics Subject Classification ID

Finite element, Galerkin and related methods applied to problems in optics and electromagnetic theory (78M10) Statistical mechanics of semiconductors (82D37) Technical applications of optics and electromagnetic theory (78A55)


Related Items (2)

Enriched residual free bubbles for semiconductor device simulation ⋮ A toolkit for numerical simulation of PDEs. I: Fundamentals of generic finite volume simulation.




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