A finite-volume scheme for a spinorial matrix drift-diffusion model for semiconductors

DOI10.1002/num.22030zbMath1350.82009arXiv1502.05639OpenAlexW2128553293MaRDI QIDQ2808864

Ansgar Jüngel, Claire Chainais-Hillairet, Polina Shpartko

Publication date: 25 May 2016

Published in: Numerical Methods for Partial Differential Equations (Search for Journal in Brave)

Full work available at URL: https://arxiv.org/abs/1502.05639

zbMATH Keywords

energy dissipationsemiconductorsfinite volumesfield-effect transistorspinor drift-diffusion equations

Mathematics Subject Classification ID

Statistical mechanics of semiconductors (82D37) Finite volume methods for initial value and initial-boundary value problems involving PDEs (65M08)

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