Mathematical Research Data Initiative
Main page
Recent changes
Random page
Help about MediaWiki
Create a new Item
Create a new Property
Merge two items
In other projects
MaRDI portal item
Discussion
View source
View history
Purge
English
Log in

Sensitivity Analysis of Design Parameters for Silicon Diodes

From MaRDI portal
Publication:2814536
Jump to:navigation, search

DOI10.1007/978-3-319-15585-2_4zbMath1362.82052OpenAlexW2208633639MaRDI QIDQ2814536

Rayna Georgieva, J. M. Sellier, Ivan T. Dimov

Publication date: 22 June 2016

Published in: Numerical Methods and Applications (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1007/978-3-319-15585-2_4


zbMATH Keywords

Boltzmann equationelectron transportFourier amplitude sensitivity testBoltzmann Monte Carlo methodsilicon diodes


Mathematics Subject Classification ID

Monte Carlo methods (65C05) Statistical mechanics of semiconductors (82D37) Numerical methods for discrete and fast Fourier transforms (65T50) Transport processes in time-dependent statistical mechanics (82C70) Motion of charged particles (78A35) Boltzmann equations (35Q20)








This page was built for publication: Sensitivity Analysis of Design Parameters for Silicon Diodes

Retrieved from "https://portal.mardi4nfdi.de/w/index.php?title=Publication:2814536&oldid=15723028"
Tools
What links here
Related changes
Special pages
Printable version
Permanent link
Page information
This page was last edited on 3 February 2024, at 17:56.
Privacy policy
About MaRDI portal
Disclaimers
Imprint
Powered by MediaWiki