2DEG-3DEG Charge Transport Model for MOSFET Based on the Maximum Entropy Principle

DOI10.1137/120893483zbMath1291.82132OpenAlexW1978972350MaRDI QIDQ2862273

Vittorio Romano, Vito Dario Camiola

Publication date: 14 November 2013

Published in: SIAM Journal on Applied Mathematics (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1137/120893483

zbMATH Keywords

semiconductorshydrodynamical modelsquantum transport2-D electron gases3-D electron gasesenergy transport models

Mathematics Subject Classification ID

Statistical mechanics of semiconductors (82D37) Transport processes in time-dependent statistical mechanics (82C70) Boltzmann equations (35Q20)

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An improved 2D-3D model for charge transport based on the maximum entropy principle ⋮ Boltzmann's six-moment one-dimensional nonlinear system equations with the Maxwell-Auzhan boundary conditions ⋮ Hydrodynamical model for charge transport in graphene

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