Mathematical Research Data Initiative
Main page
Recent changes
Random page
Help about MediaWiki
Create a new Item
Create a new Property
Create a new EntitySchema
Merge two items
In other projects
Discussion
View source
View history
Purge
English
Log in

Global solution to the drift-diffusion-Poisson system for semiconductors with nonlinear recombination-generation rate

From MaRDI portal
Publication:2864766
Jump to:navigation, search

DOI10.3233/ASY-131176zbMath1284.35437arXiv1108.5844OpenAlexW1587334433MaRDI QIDQ2864766

Jie Jiang, Hao Wu

Publication date: 26 November 2013

Published in: Asymptotic Analysis (Search for Journal in Brave)

Full work available at URL: https://arxiv.org/abs/1108.5844

zbMATH Keywords

uniquenesslong-time behaviorglobal weak solutiondrift-diffusion-Poisson system


Mathematics Subject Classification ID

PDEs of mixed type (35M10) Statistical mechanics of semiconductors (82D37) Laplace operator, Helmholtz equation (reduced wave equation), Poisson equation (35J05) Weak solutions to PDEs (35D30) PDEs in connection with statistical mechanics (35Q82)


Related Items

An hybrid finite element method for a quasi-variational inequality modeling a semiconductor, Uniform-in-time bounds for approximate solutions of the drift-diffusion system



Retrieved from "https://portal.mardi4nfdi.de/w/index.php?title=Publication:2864766&oldid=15804529"
Tools
What links here
Related changes
Special pages
Printable version
Permanent link
Page information
MaRDI portal item
This page was last edited on 3 February 2024, at 20:25.
Privacy policy
About MaRDI portal
Disclaimers
Imprint
Powered by MediaWiki