The surface charging effects in three-dimensional simulation of the profiles of plasma-etched nanostructures

DOI10.1002/JNM.798zbMath1245.78013OpenAlexW2092454948MaRDI QIDQ2889645

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Publication date: 8 June 2012

Published in: International Journal of Numerical Modelling: Electronic Networks, Devices and Fields (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1002/jnm.798

zbMATH Keywords

level set methodfinite elements methodplasma etchingprofile charging

Mathematics Subject Classification ID

Finite element, Galerkin and related methods applied to problems in optics and electromagnetic theory (78M10) Statistical mechanics of semiconductors (82D37) Statistical mechanics of plasmas (82D10) Motion of charged particles (78A35)

Related Items (1)

The breakdown voltage characteristics and the secondary electron production in direct current hydrogen discharges for the gaps ranging from \(1 \mu m\) to \(100 \mu \)m

Cites Work

• Sparse field level set method for non-convex Hamiltonians in 3D plasma etching profile simulations
• Simultaneous potential and circuit solution for 1D bounded plasma particle simulation codes

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