Charge Transport in Semiconductors and a Finite Volume Scheme

DOI10.1007/978-3-642-20671-9_54zbMath1246.78031OpenAlexW2168716344MaRDI QIDQ2902128

Klaus Gärtner

Publication date: 17 August 2012

Published in: Finite Volumes for Complex Applications VI Problems & Perspectives (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1007/978-3-642-20671-9_54

zbMATH Keywords

reaction-diffusion systemsDelaunay gridsdiscrete bounded solutionsdiscrete weak maximum principle

Mathematics Subject Classification ID

Reaction-diffusion equations (35K57) Statistical mechanics of semiconductors (82D37) Finite volume methods, finite integration techniques applied to problems in optics and electromagnetic theory (78M12) Finite volume methods for boundary value problems involving PDEs (65N08)

Related Items (1)

On gradient structures for Markov chains and the passage to Wasserstein gradient flows

Cites Work

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