Numerical Simulation of a Hydrodynamic Subband Model for Semiconductors Based on the Maximum Entropy Principle

DOI10.1007/978-3-642-22453-9_36zbMath1252.82113OpenAlexW237856438MaRDI QIDQ2902820

Vittorio Romano, Giovanni Mascali

Publication date: 22 August 2012

Published in: Scientific Computing in Electrical Engineering SCEE 2010 (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1007/978-3-642-22453-9_36

zbMATH Keywords

maximum entropy principlehydrodynamic sub-band model

Mathematics Subject Classification ID

Statistical mechanics of semiconductors (82D37) Quantum hydrodynamics and relativistic hydrodynamics (76Y05)

Related Items (5)

A hierarchy of macroscopic models for phonon transport in graphene ⋮ Numerical simulation of a double-gate MOSFET with a subband model for semiconductors based on the maximum entropy principle ⋮ An improved 2D-3D model for charge transport based on the maximum entropy principle ⋮ Simulation of a double-gate MOSFET by a non-parabolic energy-transport subband model for semiconductors based on the maximum entropy principle ⋮ Diffusive limit of the two-band \(k\cdot p\) model for semiconductors

Cites Work

• Subband decomposition approach for the simulation of quantum electron transport in nanostructures
• A deterministic solver for a hybrid quantum-classical transport model in nanoMOSFETs
• 2D numerical simulation of the MEP energy-transport model with a finite difference scheme
• The maximum entropy method
• Hydrodynamical model of charge transport in GaAs based on the maximum entropy principle
• 2D simulation of a silicon MESFET with a nonparabolic hydrodynamical model based on the maximum entropy principle
• Non parabolic band transport in semiconductors: closure of the moment equations
• Non-parabolic band transport in semiconductors: Closure of the production terms in the moment equations
• Central Schemes for Balance Laws of Relaxation Type
• Information Theory and Statistical Mechanics
• Exact Maximum Entropy Closure of the Hydrodynamical Model for Si Semiconductors: The 8-Moment Case
• A Deterministic Solver to the Boltzmann-Poisson System Including Quantization Effects for Silicon-MOSFETs

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