QUASI TWO-DIMENSIONAL ANALYSIS OF THE SURFACE POTENTIAL FOR POLY-Si THIN FILM TRANSISTORS BASED ON THE CHANNEL POTENTIAL
DOI10.1142/S0217979212500695zbMath1247.93006OpenAlexW2049102704MaRDI QIDQ2919384
Publication date: 2 October 2012
Published in: International Journal of Modern Physics B (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1142/s0217979212500695
surface potentialchannel potentialpolycrystalline silicon thin film transistors (poly-Si TFTs)quasi two-dimensional analysisrelative high gate and low drain biasesstrong inversion region
Control/observation systems governed by partial differential equations (93C20) Statistical mechanics of semiconductors (82D37) Laplace operator, Helmholtz equation (reduced wave equation), Poisson equation (35J05) Technical applications of optics and electromagnetic theory (78A55)
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