Influence of Heat Source Size on Phonon Transport in Thin Silicon Film
From MaRDI portal
Publication:2921211
DOI10.1080/00411450.2013.853193zbMath1302.82102OpenAlexW2081337772MaRDI QIDQ2921211
Saad bin Mansoor, Bekir Sami Yilbas
Publication date: 7 October 2014
Published in: Transport Theory and Statistical Physics (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1080/00411450.2013.853193
Rarefied gas flows, Boltzmann equation in fluid mechanics (76P05) Finite difference methods for initial value and initial-boundary value problems involving PDEs (65M06) Transport processes in time-dependent statistical mechanics (82C70) Waves and radiation in optics and electromagnetic theory (78A40)
Related Items (2)
Entropy Generation Rate for Stationary Ballistic-Diffusive Heat Conduction in a Rectangular Flake ⋮ Phonon cross-plane transport and thermal boundary resistance: effect of heat source size and thermal boundary resistance on phonon characteristics
This page was built for publication: Influence of Heat Source Size on Phonon Transport in Thin Silicon Film