Electrothermal Transport in Silicon Carbide Semiconductors via a Hydrodynamic Model
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Publication:2945469
DOI10.1137/140995623zbMath1327.82093OpenAlexW1265954734MaRDI QIDQ2945469
Vincenza Di Stefano, Orazio Muscato
Publication date: 11 September 2015
Published in: SIAM Journal on Applied Mathematics (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1137/140995623
Statistical mechanics of semiconductors (82D37) Kinetic theory of gases in equilibrium statistical mechanics (82B40) Irreversible thermodynamics, including Onsager-Machlup theory (82B35)
Related Items (6)
A hierarchy of macroscopic models for phonon transport in graphene ⋮ Non-Parabolic Band Hydrodynamic Model for Silicon Quantum Wires ⋮ An Energy Transport Model Describing Electro-Thermal Transport in Silicon Carbide Semiconductors ⋮ A benchmark study of the signed-particle Monte Carlo algorithm for the Wigner equation ⋮ A hierarchy of hydrodynamic models for silicon carbide semiconductors ⋮ Simulation of Bipolar Charge Transport in Graphene by Using a Discontinuous Galerkin Method
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