Heat generation in silicon nanometric semiconductor devices
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Publication:2970720
DOI10.1108/COMPEL-11-2012-0327zbMath1358.82040OpenAlexW2033744678MaRDI QIDQ2970720
Orazio Muscato, Wolfgang Wagner, Vincenza Di Stefano
Publication date: 30 March 2017
Published in: COMPEL: The International Journal for Computation and Mathematics in Electrical and Electronic Engineering (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1108/compel-11-2012-0327
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Non-Parabolic Band Hydrodynamic Model for Silicon Quantum Wires ⋮ Heat generation in silicon nanometric semiconductor devices
Cites Work
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- Seebeck effect in silicon semiconductors
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- Heat generation in silicon nanometric semiconductor devices
- Heat generation and transport in nanoscale semiconductor devices via Monte Carlo and hydrodynamic simulations
- Hydrodynamic modeling of the electro-thermal transport in silicon semiconductors
- Charge transport in 1D silicon devices via Monte Carlo simulation and Boltzmann‐Poisson solver
- Monte Carlo evaluation of the transport coefficients in a n+ – n – n+ silicon diode
- Numerical study of the systematic error in Monte Carlo schemes for semiconductors
- Time step truncation in direct simulation Monte Carlo for semiconductors
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