MODIFIED CHARGE FLUCTUATION NOISE MODEL FOR ELECTROLYTE-INSULATOR-SEMICONDUCTOR DEVICES

DOI10.1142/S0217984911026103zbMath1217.82104OpenAlexW2025999923WikidataQ58059143 ScholiaQ58059143MaRDI QIDQ3011543

A. Offenhäusser, Michael J. Schöning, Ferdinand V. Gasparyan, S. A. Vitusevich

Publication date: 29 June 2011

Published in: Modern Physics Letters B (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1142/s0217984911026103

zbMATH Keywords

charge fluctuationsfield-effect transistorlow-frequency noise

Mathematics Subject Classification ID

Statistical mechanics of semiconductors (82D37)

Cites Work

• Random hopping among localized states and charge fluctuation at disordered surfaces
• Analysis of 1/f noise in switched MOSFET circuits

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