Relaxation-time limit of the three-dimensional hydrodynamic model with boundary effects
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Publication:3011578
DOI10.1002/mma.1433zbMath1219.35192OpenAlexW2060858650MaRDI QIDQ3011578
Publication date: 29 June 2011
Published in: Mathematical Methods in the Applied Sciences (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1002/mma.1433
PDEs in connection with fluid mechanics (35Q35) PDEs of mixed type (35M10) Magnetohydrodynamics and electrohydrodynamics (76W05)
Related Items (3)
Optimal decay rate of the bipolar Euler–Poisson system with damping in dimension three ⋮ Relaxation limit of the one-dimensional bipolar Euler-Poisson system in the bound domain ⋮ Relaxation-time limit in the multi-dimensional bipolar nonisentropic Euler-Poisson systems
Cites Work
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- Global smooth solutions to the multi-dimensional hydrodynamic model for two-carrier plasmas
- Weak solutions to a hydrodynamic model for semiconductors and relaxation to the drift-diffusion equation
- The bipolar hydrodynamic model for semiconductors and the drift-diffusion equations
- Diffusion relaxation limit of a bipolar hydrodynamic model for semiconductors
- Global existence and asymptotic behavior for a multidimensional nonisentropic hydrodynamic semiconductor model with the heat source
- A hierarchy of hydrodynamic models for plasmas zero-relaxation-time limits
- Relaxation of the isothermal Euler-Poisson system to the drift-diffusion equations
- The energy transport and the drift diffusion equations as relaxation limits of the hydrodynamic model for semiconductors
- Global Existence and Relaxation Limit for Smooth Solutions to the Euler--Poisson Model for Semiconductors
- THE GLOBAL WEAK SOLUTION AND RELAXATION LIMITS OF THE INITIAL–BOUNDARY VALUE PROBLEM TO THE BIPOLAR HYDRODYNAMIC MODEL FOR SEMICONDUCTORS
- ON THE 3-D BIPOLAR ISENTROPIC EULER–POISSON MODEL FOR SEMICONDUCTORS AND THE DRIFT-DIFFUSION LIMIT
- Diffusive Relaxation Limit of Multidimensional Isentropic Hydrodynamical Models for Semiconductors
- Asymptotics of initial boundary value problems for hydrodynamic and drift diffusion models for semiconductors
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