Heat generation and transport in nanoscale semiconductor devices via Monte Carlo and hydrodynamic simulations

DOI10.1108/03321641111101050zbMath1219.82200OpenAlexW1969763561MaRDI QIDQ3019400

Orazio Muscato, Vincenza Di Stefano

Publication date: 28 July 2011

Published in: COMPEL - The international journal for computation and mathematics in electrical and electronic engineering (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1108/03321641111101050

zbMATH Keywords

thermodynamicsMonte Carlo simulationnanotechnologysemiconductor devices

Mathematics Subject Classification ID

Related Items (10)

Electron transport in silicon nanowires having different cross-sections ⋮ Non-Parabolic Band Hydrodynamic Model for Silicon Quantum Wires ⋮ Charge Transport and Hot-Phonon Activation in Graphene ⋮ Electrothermal Transport in Silicon Carbide Semiconductors via a Hydrodynamic Model ⋮ Seebeck effect in silicon semiconductors ⋮ A benchmark study of the signed-particle Monte Carlo algorithm for the Wigner equation ⋮ A hierarchy of hydrodynamic models for silicon carbide semiconductors ⋮ Heat generation in silicon nanometric semiconductor devices ⋮ Hydrodynamical model for charge transport in graphene ⋮ Hydrodynamic simulation of a \(n^{+}-n-n^{+}\) silicon nanowire

Cites Work

• Non parabolic band transport in semiconductors: closure of the moment equations
• Monte Carlo evaluation of the transport coefficients in a n⁺ – n – n⁺ silicon diode
• CROSS-VALIDATION OF NUMERICAL SCHEMES FOR EXTENDED HYDRODYNAMICAL MODELS OF SEMICONDUCTORS
• Generalized kinetic theory of electrons and phonons

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