Heat generation and transport in nanoscale semiconductor devices via Monte Carlo and hydrodynamic simulations
From MaRDI portal
Publication:3019400
DOI10.1108/03321641111101050zbMath1219.82200OpenAlexW1969763561MaRDI QIDQ3019400
Orazio Muscato, Vincenza Di Stefano
Publication date: 28 July 2011
Published in: COMPEL - The international journal for computation and mathematics in electrical and electronic engineering (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1108/03321641111101050
Lua error in Module:PublicationMSCList at line 37: attempt to index local 'msc_result' (a nil value).
Related Items (10)
Electron transport in silicon nanowires having different cross-sections ⋮ Non-Parabolic Band Hydrodynamic Model for Silicon Quantum Wires ⋮ Charge Transport and Hot-Phonon Activation in Graphene ⋮ Electrothermal Transport in Silicon Carbide Semiconductors via a Hydrodynamic Model ⋮ Seebeck effect in silicon semiconductors ⋮ A benchmark study of the signed-particle Monte Carlo algorithm for the Wigner equation ⋮ A hierarchy of hydrodynamic models for silicon carbide semiconductors ⋮ Heat generation in silicon nanometric semiconductor devices ⋮ Hydrodynamical model for charge transport in graphene ⋮ Hydrodynamic simulation of a \(n^{+}-n-n^{+}\) silicon nanowire
Cites Work
- Non parabolic band transport in semiconductors: closure of the moment equations
- Monte Carlo evaluation of the transport coefficients in a n+ – n – n+ silicon diode
- CROSS-VALIDATION OF NUMERICAL SCHEMES FOR EXTENDED HYDRODYNAMICAL MODELS OF SEMICONDUCTORS
- Generalized kinetic theory of electrons and phonons
This page was built for publication: Heat generation and transport in nanoscale semiconductor devices via Monte Carlo and hydrodynamic simulations
