NEW POSSIBILITIES FOR OBTAINING STEEPLY NONLINEAR CURRENT–VOLTAGE CHARACTERISTICS IN SOME SEMICONDUCTOR STRUCTURES

DOI10.1142/S0217979210056128zbMath1203.82112arXiv0905.2142MaRDI QIDQ3062699

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Publication date: 28 December 2010

Published in: International Journal of Modern Physics B (Search for Journal in Brave)

Full work available at URL: https://arxiv.org/abs/0905.2142

zbMATH Keywords

current-voltage characteristicsSchottky barriertransmission ratesresonant tunneling structuresteep nonlinearity

Mathematics Subject Classification ID

Statistical mechanics of semiconductors (82D37)

Cites Work

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