On calculating the electric potential for 2D silicon transistor with a silicon oxide nanochannel
From MaRDI portal
Publication:3082245
DOI10.1134/S2070048211020025zbMath1224.76180MaRDI QIDQ3082245
A. S. Ibragimova, Alexander Blokhin
Publication date: 9 March 2011
Published in: Mathematical Models and Computer Simulations (Search for Journal in Brave)
Related Items (2)
On an algorithm for finding the electric potential distribution in the DG-MOSFET transistor ⋮ A new approach to numerical simulation of charge transport in double gate-MOSFET
Cites Work
- Unnamed Item
- Unnamed Item
- Unnamed Item
- Unnamed Item
- 2D numerical simulation of the MEP energy-transport model with a finite difference scheme
- 1D numerical simulation of the mep mathematical model in ballistic diode problem
- 2D simulation of a silicon MESFET with a nonparabolic hydrodynamical model based on the maximum entropy principle
- Non parabolic band transport in semiconductors: closure of the moment equations
- Non-parabolic band transport in semiconductors: Closure of the production terms in the moment equations
- Linear asymptotic stability of the equilibrium state for the 2-D MEP hydrodynamical model of charge transport in semiconductors
- Numerical Method for 2D Simulation of a Silicon MESFET with a Hydrodynamical Model Based on the Maximum Entropy Principle
This page was built for publication: On calculating the electric potential for 2D silicon transistor with a silicon oxide nanochannel