Charge transport in 1D silicon devices via Monte Carlo simulation and Boltzmann‐Poisson solver

DOI10.1108/03321640410510578zbMath1125.82324OpenAlexW2004954336MaRDI QIDQ3156132

Orazio Muscato, Armando Majorana, Cristina L. R. Milazzo

Publication date: 6 January 2005

Published in: COMPEL - The international journal for computation and mathematics in electrical and electronic engineering (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1108/03321640410510578

zbMATH Keywords

Monte Carlo simulationSemiconductor devicesSiliconElectronic engineering

Mathematics Subject Classification ID

Rarefied gas flows, Boltzmann equation in fluid mechanics (76P05) Finite difference methods for initial value and initial-boundary value problems involving PDEs (65M06) Statistical mechanics of semiconductors (82D37)

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Cites Work

• Upwind finite difference solution of Boltzmann equation applied to electron transport in semiconductor devices
• A finite difference scheme solving the Boltzmann-Poisson system for semiconductor devices