Study of the jump conditions for the 2D MEP hydrodynamical model of charge transport in semiconductors
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Publication:3183279
DOI10.1108/03321640910929209zbMath1184.82015OpenAlexW2010488345MaRDI QIDQ3183279
R. S. Bushmanov, Alexander Blokhin
Publication date: 19 October 2009
Published in: COMPEL - The international journal for computation and mathematics in electrical and electronic engineering (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1108/03321640910929209
Statistical mechanics of semiconductors (82D37) Magnetohydrodynamics and electrohydrodynamics (76W05) Motion of charged particles (78A35)
Cites Work
- Asymptotic stability of the equilibrium state for the hydrodynamical model of charge transport in semiconductors based on the maximum entropy principle
- Nonlinear asymptotic stability of the equilibrium state for the MEP model of charge transport in semiconductors
- Moment closure hierarchies for kinetic theories.
- 2D simulation of a silicon MESFET with a nonparabolic hydrodynamical model based on the maximum entropy principle
- Global existence for the system of the macroscopic balance equations of charge transport in semiconductors
- Non parabolic band transport in semiconductors: closure of the moment equations
- Non-parabolic band transport in semiconductors: Closure of the production terms in the moment equations
- Linear asymptotic stability of the equilibrium state for the 2-D MEP hydrodynamical model of charge transport in semiconductors
- Non-parabolic band hydrodynamical model of silicon semiconductors and simulation of electron devices
- TRANSIENT SEMICONDUCTOR DEVICE SIMULATION INCLUDING ENERGY BALANCE EQUATION
- On a hierarchy of macroscopic models for semiconductors
- Hydrodynamical modeling of charge carrier transport in semiconductors
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