ON THE WELL‐POSEDNESS OF THE TWO‐DIMENSIONAL HYDRODYNAMIC MODEL FOR SEMICONDUCTOR DEVICES

DOI10.1108/eb010325zbMath0732.35095OpenAlexW1980918773MaRDI QIDQ3357599

No author found.

Publication date: 1990

Published in: COMPEL - The international journal for computation and mathematics in electrical and electronic engineering (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1108/eb010325

zbMATH Keywords

stabilitytime-dependent problemmixed hyperbolic-elliptic systemSchottky-barrier type conditionsstationary hydrodynamic model

Mathematics Subject Classification ID

PDEs in connection with optics and electromagnetic theory (35Q60) Dependence of solutions to PDEs on initial and/or boundary data and/or on parameters of PDEs (35B30)

Related Items (8)

A review of hydrodynamical models for semiconductors: Asymptotic behavior ⋮ AN ANALYSIS OF THE HYDRODYNAMIC SEMICONDUCTOR DEVICE MODEL — BOUNDARY CONDITIONS AND SIMULATIONS ⋮ Numerical simulation of the smooth quantum hydrodynamic model for semiconductor devices ⋮ Numerical solutions of a viscous‐hydrodynamic model for semiconductors: the supersonic case ⋮ Unnamed Item ⋮ Numerical solution of two-carrier hydrodynamic semiconductor device equations employing a stabilized finite element method ⋮ Convergence of the Godunov scheme for a simplified one-dimensional hydrodynamic model for semiconductor devices ⋮ Unnamed Item

Cites Work

• Mixed problems for the linearized shallow water equations
• Estimates near the boundary for solutions of elliptic partial differential equations satisfying general boundary conditions II

This page was built for publication: ON THE WELL‐POSEDNESS OF THE TWO‐DIMENSIONAL HYDRODYNAMIC MODEL FOR SEMICONDUCTOR DEVICES