Exact resolution of coupled Schrödinger–Poisson equation: application to accurate determination of potential profile in HEMTs
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Publication:3359698
DOI10.1049/EL:19911149zbMath0733.65085OpenAlexW1995593993MaRDI QIDQ3359698
M. Benabbas, H. Baudrand, D. Bajon, B. Marir
Publication date: 1991
Published in: Electronics Letters (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1049/el:19911149
potentialwave functioncarrier distributionsconduction band bendingcoupled Schrödinger-Poisson equationsemi-conductor devices
PDEs in connection with optics and electromagnetic theory (35Q60) Technical applications of optics and electromagnetic theory (78A55) Applications to the sciences (65Z05)
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