A continuous surface-potential solution from accumulation to inversion for intrinsic symmetric double-gate MOSFETs

DOI10.1080/08927020802609454zbMath1170.82428OpenAlexW1987283129WikidataQ58215659 ScholiaQ58215659MaRDI QIDQ3394237

M. S. Chan, Jian Zhang, Jin He, Lining Zhang, Rui Zheng

Publication date: 28 August 2009

Published in: Molecular Simulation (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1080/08927020802609454

zbMATH Keywords

surface potentialcompact modellingdevice physicsDG-MOSFETsnon-classical CMOSULSI circuit simulation

Mathematics Subject Classification ID

Statistical mechanics of semiconductors (82D37)

This page was built for publication: A continuous surface-potential solution from accumulation to inversion for intrinsic symmetric double-gate MOSFETs