A complete analytic surface potential-based core model for intrinsic nanowire surrounding-gate MOSFETs

DOI10.1080/08927020802706995zbMath1170.82427OpenAlexW2171404457WikidataQ58215654 ScholiaQ58215654MaRDI QIDQ3394239

Jian Zhang, Feilong Liu, Chenyue Ma, Jin He, M. S. Chan, Lining Zhang

Publication date: 28 August 2009

Published in: Molecular Simulation (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1080/08927020802706995

zbMATH Keywords

device physicsnon-charge-sheet approximationnon-classical MOS transistorsurface potential modelsurrounding-gate MOSFETs

Mathematics Subject Classification ID

Statistical mechanics of semiconductors (82D37)

Uses Software

• Sentaurus Device

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