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Conductance asymmetry of a slot gate Si-MOSFET in a strong parallel magnetic field - MaRDI portal

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Conductance asymmetry of a slot gate Si-MOSFET in a strong parallel magnetic field

From MaRDI portal
Publication:3402334

DOI10.1002/ANDP.200910400zbMATH Open1180.82207arXiv0909.1491OpenAlexW3106404284MaRDI QIDQ3402334

Author name not available (Why is that?)

Publication date: 3 February 2010

Published in: (Search for Journal in Brave)

Abstract: We report measurements on a Si-MOSFET sample with a slot in the upper gate, allowing for different electron densities n_{1,2} across the slot. The dynamic longitudinal resistance was measured by the standard lock-in technique, while maintaining a large DC current through the source-drain channel. We find that the conductance of the sample in a strong parallel magnetic field is asymmetric with respect to the DC current direction. This asymmetry increases with magnetic field. The results are interpreted in terms of electron spin accumulation or depletion near the slot.


Full work available at URL: https://arxiv.org/abs/0909.1491



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