Modified octree mesh generation for Manhattan type structures with narrow layers applied to semiconductor devices

DOI10.1002/JNM.623zbMath1104.82050OpenAlexW2075518905MaRDI QIDQ3418211

J. J. Pombo, A. J. García-Loureiro, Manuel Aldegunde

Publication date: 2 February 2007

Published in: International Journal of Numerical Modelling: Electronic Networks, Devices and Fields (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1002/jnm.623

zbMATH Keywords

mesh generationtetrahedral meshtemplatesemiconductor device simulationoctrees

Mathematics Subject Classification ID

Statistical mechanics of semiconductors (82D37) Mesh generation, refinement, and adaptive methods for boundary value problems involving PDEs (65N50)

Related Items (2)

Development of a 3D Parallel Finite Element Monte Carlo Simulator for Nano-MOSFETs ⋮ Optimization of linear systems for 3D parallel simulation of semiconductor devices: Application to statistical studies

Uses Software

• GiD

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