FETMOSS: a software tool for 2D simulation of double-gate MOSFET

DOI10.1002/JNM.613zbMath1107.82400OpenAlexW2017435918MaRDI QIDQ3423186

Tarek M. Abdolkader, O. A. Omar, Mahmoud Fathy Mahmoud Hassan, Wael Fikry Farouk

Publication date: 20 February 2007

Published in: International Journal of Numerical Modelling: Electronic Networks, Devices and Fields (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1002/jnm.613

zbMATH Keywords

transfer matrix methodfinite difference methodSchrödinger equationFEMPoisson equationdevice simulationdouble-gate MOSFETFETMOSSquantum-mechanical effects

Mathematics Subject Classification ID

Finite element, Rayleigh-Ritz and Galerkin methods for boundary value problems involving PDEs (65N30) Statistical mechanics of semiconductors (82D37) Finite difference methods for boundary value problems involving PDEs (65N06)

Uses Software

• Unnamed Item

Cites Work

• Global approximate Newton methods

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