Simulation of silicon semiconductor devices by means of a direct Boltzmann‐Poisson solver

DOI10.1108/03321640610684114zbMath1121.78310OpenAlexW2070848295MaRDI QIDQ3425630

C. Ertler, Ferdinand Schürrer

Publication date: 27 February 2007

Published in: COMPEL - The international journal for computation and mathematics in electrical and electronic engineering (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1108/03321640610684114

zbMATH Keywords

Semiconductor devicesSimulationSilicon

Mathematics Subject Classification ID

Finite element, Galerkin and related methods applied to problems in optics and electromagnetic theory (78M10) Statistical mechanics of semiconductors (82D37) Motion of charged particles (78A35)

Related Items (1)

Matrix compression for spherical harmonics expansions of the Boltzmann transport equation for semiconductors

Uses Software

• WENO

Cites Work

• Efficient implementation of essentially nonoscillatory shock-capturing schemes
• Efficient implementation of essentially nonoscillatory shock-capturing schemes. II
• Weighted essentially non-oscillatory schemes
• A WENO-solver for the transients of Boltzmann-Poisson system for semiconductor devices: Performance and comparisons with Monte Carlo methods.
• Transport and Deformation-Potential Theory for Many-Valley Semiconductors with Anisotropic Scattering
• A finite difference scheme solving the Boltzmann-Poisson system for semiconductor devices

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