STUDY OF THE INHOMOGENEITY OF SCHOTTKY BARRIER HEIGHT IN NICKEL SILICIDE BY THE INTERNAL PHOTOEMISSION SPECTROSCOPY

DOI10.1142/S0217984906012110zbMath1108.82336OpenAlexW1984124127MaRDI QIDQ3430583

Shihua Huang, Feng-min Wu

Publication date: 22 March 2007

Published in: Modern Physics Letters B (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1142/s0217984906012110

zbMATH Keywords

annealingnickel silicidesckottky barrier inhomogeneitythe internal photoemission

Mathematics Subject Classification ID

Statistical mechanics of semiconductors (82D37)

Cites Work

• The Analysis of Photoelectric Sensitivity Curves for Clean Metals at Various Temperatures

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