Approximate solutions to the quantum drift-diffusion model of semiconductors
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Publication:3442212
DOI10.1063/1.2435985zbMath1121.82045OpenAlexW1999482637MaRDI QIDQ3442212
Vittorio Romano, Rita Tracinà, Mariano Torrisi
Publication date: 16 May 2007
Published in: Journal of Mathematical Physics (Search for Journal in Brave)
Full work available at URL: https://semanticscholar.org/paper/48ac2ef86fe51ca27f28a9d1b68e747411b9d34f
Related Items (2)
Quantum Semiconductor Models ⋮ Group classification of an energy transport model for semiconductors with crystal heating
Cites Work
- On the stationary quantum drift-diffusion model
- Equivalence transformations and symmetries for a heat conduction model
- Mathematical problems in semiconductor physics. Lectures given at the C. I. M. E. summer school, Cetraro, Italy, July 15--22, 1998. With the collaboration of G. Mascali and V. Romano
- Quantum-corrected drift-diffusion models for transport in semiconductor devices
- Quantum energy-transport and drift-diffusion models
- Lagrangian variational principle in stochastic mechanics: Gauge structure and stability
- Asymptotic Methods for Metal Oxide Semiconductor Field Effect Transistor Modeling
- Singular Perturbations and a Free Boundary Problem in the Modeling of Field-Effect Transistors
- Uniform Convergence of an Exponentially Fitted Scheme for the Quantum Drift Diffusion Model
- Nano-scale MOSFET device modelling with quantum mechanical effects
- Second-order differential invariants of a family of diffusion equations
- Current-voltage characteristics from an asymptotic analysis of the MOSFET equations
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