SEMICONDUCTOR DEVICE MODELING USING FLUX UPWIND FINITE ELEMENTS

DOI10.1108/eb010063zbMath0703.65083OpenAlexW2008786640MaRDI QIDQ3482800

No author found.

Publication date: 1989

Published in: COMPEL - The international journal for computation and mathematics in electrical and electronic engineering (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1108/eb010063

zbMATH Keywords

transport equationsnumerical dissipationNumerical resultsstable algorithmsemiconductor device modelingadaptive finite element refinementflux-upwind finite element method

Mathematics Subject Classification ID

PDEs in connection with optics and electromagnetic theory (35Q60) Finite element, Rayleigh-Ritz and Galerkin methods for initial value and initial-boundary value problems involving PDEs (65M60) Technical applications of optics and electromagnetic theory (78A55) Applications to the sciences (65Z05)

Related Items (7)

A class of finite element methods with averaging techniques for solving the three-dimensional drift-diffusion model in semiconductor device simulations ⋮ Enriched residual free bubbles for semiconductor device simulation ⋮ Simulation of MESFET device by streamline‐diffusion finite element methods ⋮ Multilevel solution of augmented drift‐diffusion equations ⋮ Stabilized 3D finite elements for the numerical solution of the Navier-Stokes equations in semiconductors ⋮ Numerical solution of two-carrier hydrodynamic semiconductor device equations employing a stabilized finite element method ⋮ A perspective on adaptive modeling and meshing (AM\& M)

Cites Work

• Exponential upwinding and integrating factors for symmetrization

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