OPTIMAL DOPANT PROFILING BASED ON ENERGY-TRANSPORT SEMICONDUCTOR MODELS

DOI10.1142/S0218202508002656zbMath1188.35187MaRDI QIDQ3521649

Concetta Drago, René Pinnau

Publication date: 26 August 2008

Published in: Mathematical Models and Methods in Applied Sciences (Search for Journal in Brave)

zbMATH Keywords

energy transportnumericsdescent algorithmadjointsdrift diffusionaggressive space mappingoptimal semiconductor design

Mathematics Subject Classification ID

Optimality conditions for problems involving partial differential equations (49K20) PDEs in connection with optics and electromagnetic theory (35Q60) Programming in abstract spaces (90C48) Statistical mechanics of semiconductors (82D37) Periodic optimal control problems (49N20)

Related Items (5)

On the Modeling and Simulation of Reaction-Transfer Dynamics in Semiconductor-Electrolyte Solar Cells ⋮ Optimal Control for Semiconductor Diode Design based on the MEP Energy-Transport Model ⋮ Energy transport in semiconductor devices ⋮ The Quasi-Neutral Limit in Optimal Semiconductor Design ⋮ Recovering doping profiles in semiconductor devices with the Boltzmann-Poisson model

Uses Software

• KELLEY

Cites Work

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• A system of parabolic equations in nonequilibrium thermodynamics including thermal and electrical effects
• An energy-transport model for semiconductors derived from the Boltzmann equation.
• An optimization approach to a finite dimensional parameter estimation problem in semiconductor device design
• Fast Optimal Design of Semiconductor Devices
• Numerical Discretization of Energy-Transport Models for Semiconductors with Nonparabolic Band Structure
• AN OPTIMAL CONTROL APPROACH TO SEMICONDUCTOR DESIGN
• Augmented Lagrangian–SQP Methods for Nonlinear Optimal Control Problems of Tracking Type
• On a hierarchy of macroscopic models for semiconductors

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