COMPARISON OF STEADY-STATE AND TRANSIENT ELECTRON TRANSPORT IN InAs, InP AND GaAs

DOI10.1142/S0217984908016364zbMath1214.82092OpenAlexW2020572461MaRDI QIDQ3534048

M. R. Khalvati, M. Rezaee Rokn-Abadi, H. Arabshahi

Publication date: 3 November 2008

Published in: Modern Physics Letters B (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1142/s0217984908016364

zbMATH Keywords

velocity overshootsteady-statecritical field

Mathematics Subject Classification ID

Transport processes in time-dependent statistical mechanics (82C70)

Related Items (1)

MONTE CARLO SIMULATION OF STEADY-STATE TRANSPORT IN SUBMICROMETERInPANDGaAsn⁺–i(n)–n⁺DIODE

Cites Work

• A fast Poisson solver for realistic semiconductor device structures

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