Modifications of the DC Raytheon-Statz model for SiC MESFETs

DOI10.1002/JNM.696zbMath1214.78010OpenAlexW4232319101MaRDI QIDQ3541262

Damian Bisewski, Janusz Zarȩbski

Publication date: 25 November 2008

Published in: International Journal of Numerical Modelling: Electronic Networks, Devices and Fields (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1002/jnm.696

zbMATH Keywords

modellingMESFETsSPICE

Mathematics Subject Classification ID

Technical applications of optics and electromagnetic theory (78A55)

This page was built for publication: Modifications of the DC Raytheon-Statz model for SiC MESFETs