Quantum corrections to the semiclassical hydrodynamical model of semiconductors based on the maximum entropy principle
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Publication:3544555
DOI10.1063/1.2819600zbMath1153.81424OpenAlexW2031496841MaRDI QIDQ3544555
Publication date: 8 December 2008
Published in: Journal of Mathematical Physics (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1063/1.2819600
Statistical mechanics of semiconductors (82D37) Quantum dynamics and nonequilibrium statistical mechanics (general) (82C10) Kinetic theory of gases in time-dependent statistical mechanics (82C40)
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Uses Software
Cites Work
- 2D numerical simulation of the MEP energy-transport model with a finite difference scheme
- Hydrodynamical model of charge transport in GaAs based on the maximum entropy principle
- Quantum moment hydrodynamics and the entropy principle
- Mathematical problems in semiconductor physics. Lectures given at the C. I. M. E. summer school, Cetraro, Italy, July 15--22, 1998. With the collaboration of G. Mascali and V. Romano
- Moment closure hierarchies for kinetic theories.
- Quantum-corrected drift-diffusion models for transport in semiconductor devices
- Quantum energy-transport and drift-diffusion models
- A WENO-solver for the transients of Boltzmann-Poisson system for semiconductor devices: Performance and comparisons with Monte Carlo methods.
- Non parabolic band transport in semiconductors: closure of the moment equations
- Non-parabolic band transport in semiconductors: Closure of the production terms in the moment equations
- Non-parabolic band hydrodynamical model of silicon semiconductors and simulation of electron devices
- Information Theory and Statistical Mechanics
- Maximisation of the entropy in non-equilibrium
- Space homogeneous solutions of the Boltzmann equation describing electron-phonon interactions in semiconductors
- Runaway Phenomena and Fluid Approximation Under High Fields in Semiconductor Kinetic Theory
- The Quantum Hydrodynamic Model for Semiconductor Devices
- Conservation laws from the Boltzmann equation describing electron-phonon interactions in semiconductors
- Approximation of Thermal Equilibrium for Quantum Gases with Discontinuous Potentials and Application to Semiconductor Devices
- On the Quantum Correction For Thermodynamic Equilibrium
- Extended Hydrodynamical Model of Carrier Transport in Semiconductors
