MONTE CARLO SIMULATION OF STEADY-STATE TRANSPORT IN SUBMICROMETERInPANDGaAsn+–i(n)–n+DIODE

DOI10.1142/S0217984910022603zbMath1186.82096OpenAlexW2027292328MaRDI QIDQ3556835

M. Rezaee Rokn-Abadi, M. R. Khalvati, F. Badieian Baghsiahi, H. Arabshahi

Publication date: 26 April 2010

Published in: Modern Physics Letters B (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1142/s0217984910022603

zbMATH Keywords

electric fieldback-scatteringBrillouin zonenon-parabolic

Mathematics Subject Classification ID

Statistical mechanics of semiconductors (82D37) Transport processes in time-dependent statistical mechanics (82C70)

Cites Work

• On the FACR(l) algorithm for the discrete Poisson equation
• COMPARISON OF STEADY-STATE AND TRANSIENT ELECTRON TRANSPORT IN InAs, InP AND GaAs

This page was built for publication: MONTE CARLO SIMULATION OF STEADY-STATE TRANSPORT IN SUBMICROMETERInPANDGaAsn⁺–i(n)–n⁺DIODE